These new devices were compared with state of- the-art silicon and an example of the comparisons, the Switching FOM, is given in Fig. In addition, this article discussed the basic electrical, thermal and mechanical characteristics of gallium nitride power devices. FOMs are helpful because no matter what the die size, the FOM is almost constant for a given technology or device generation. MOSFET manufacturers have used FOMs for years to show both generational improvements and competitive devices. The initial article, “Figures of Merit (FOM),” appearing in September 2010, defines several measurements that can be used to compare power devices.
Fet electronics how to#
For example, in the case of gallium nitride, how to drive the high frequency GaN FET, methods for optimizing dead time, determining the effects of board layouts on overall power conversion performance and the impact parasitics play in degrading efficiency. An issue that accompanies any new technology is the need to understand the idiosyncrasies of the new technology. The articles started with an introduction to the basics of GaN technology, with discussions on Figures of Merit (FOM) allowing the comparison of GaN transistors with industry-standard silicon-based MOSFET technology. Quality, Robustness and Reliability of 600 V GaN-on-Si Power Devices.Characterizing High Power Semiconductors Requires New Technologies.GaN Transistors :Thermal Management, Drive Control and Isolation Techniques.Where are the High Voltage GaN Products?.This retrospective look will give us insight into what further topics and studies are needed to advance the adoption of GaN technology, the need to learn is never finished.
It is timely to make a quick review of the fourteen articles to make certain that we have accomplished the goal of assisting engineers in climbing the learning curve.
Fet electronics series#
Articles in the series took on both basic issues and specific applications using gallium nitride components. This series is entitled eGaN FET - Power Silicon Shoot Out. One of these educational efforts has been to work with the editors of Power Electronicsmagazine and publish a bi-monthly series of articles on the characteristics of GaN technology and its applications. Since that time, EPC has continued on two parallel paths – one to expand their portfolio of products and the other to share what it learns about the use of the technology with power conversion systems design engineers. In mid-2010, GaN FET technology was made available to the general power conversion engineering community when Efficient Power Conversion (EPC) introduced the industry’s first commercially available GaN power transistor.
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